Electronic Properties of Large-scale Graphene Films Chemical Vapor Synthesized on Nickel and on Copper
نویسندگان
چکیده
We report the electronic properties of large scale graphene films grown by chemical vapor synthesis on Ni and Cu, and then transferred to SiO2/Si substrates. We have observed electric field effect and measured carrier mobilities in the samples to be on the order of 10 cm/Vs . We have also measured low temperature magnetoresistance and studied characteristic universal conductance fluctuations on samples grown on Ni.
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